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| APT8020JLL 800V 33A 0.200W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage S G D S SO ISOTOP (R) 2 T- 27 "UL Recognized" * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package D G S All Ratings: TC = 25C unless otherwise specified. APT8020JLL UNIT Volts Amps Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy AL IC HN EC ION TT CE MA AN OR DV NF A I 800 33 142 30 40 520 4.16 300 33 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 800 33 0.200 100 500 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-7079 Rev - 8-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8020JLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V MIN TYP MAX UNIT 5320 1020 168 196 26 19 17 57 11 111 nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 Diode Forward Voltage AL IC HN EC ION TT CE MA AN OR DV NF A I VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 33 142 1.3 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) Peak Diode Recovery dv/ dt 5 940 25.5 10 Q V/ns THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.24 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.51mH, R = 25W, Peak I = 33A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein. SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) 050-7079 Rev - 8-2001 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. * Source Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 Gate 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 |
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